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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10106704 B1

PDFFull Text
Date of Patent:
Oct. 23, 2018

Filed:

Mar. 09, 2015

Polishing composition, polishing method, and method for producing substrate

Applicant:

Fujimi Incorporated, Kiyosu-shi, Aichi, JP;

Inventor:

Yasuyuki Yamato, Kiyosu, JP;

Assignee:

FUJIMI INCORPORATED, Kiyosu-Shi, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Stephanie P Duclair

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/311 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/321 (2006.01); H01L 21/306 (2006.01); C09G 1/04 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C09G 1/04 (2013.01); C09K 3/14 (2013.01); C09K 3/1409 (2013.01); C09K 3/1436 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/32115 (2013.01); H01L 21/7684 (2013.01);
Abstract

To provide a polishing composition that can be used as an alternative of a polishing composition containing cerium oxide abrasive grains in STI and other such CMP applications, and to provide a polishing method and a method for producing a substrate using this polishing composition. A polishing composition being used in applications for polishing a layer that contains a substance having a pH range presenting a positive zeta potential in an aqueous solution of pH 6 or lower, wherein the polishing composition contains abrasive grains (A), abrasive grains (B), and a pH adjusting agent, and the abrasive grains (B) has a negative zeta potential in an aqueous solution of pH 6 or lower, and the value of the average secondary particle diameter of the abrasive grains (B) is less than the value of the average secondary particle diameter of the abrasive grains (A) and is 15 nm or less and the polishing composition has a pH of 6 or lower.

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