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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103540 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

Apr. 24, 2014

Method and system for transient voltage suppression devices with active control

Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Avinash Srikrishnan Kashyap, Niskayuna, NY (US);

Peter Micah Sandvik, Niskayuna, NY (US);

Joe Walter Kirstein, Orland Park, IL (US);

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:

GE Global Patent Operation

Nitin Joshi

Primary Examiner:

Christopher McAndrew

Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01); H01L 29/16 (2006.01); H01L 27/02 (2006.01); H01L 25/065 (2006.01); H01L 29/70 (2006.01); G01R 31/28 (2006.01); G01R 1/04 (2006.01); G01R 31/26 (2014.01); H01L 29/423 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H02H 9/04 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/76898 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/0255 (2013.01); H01L 29/1608 (2013.01); H01L 29/423 (2013.01); H01L 29/70 (2013.01); H02H 9/044 (2013.01); G01R 1/0458 (2013.01); G01R 31/2642 (2013.01); G01R 31/2874 (2013.01); G01R 31/2875 (2013.01); G01R 31/2891 (2013.01); H01L 29/42304 (2013.01); H01L 29/732 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A transient voltage suppression (TVS) device and a method of forming the device are provided. The transient voltage suppression (TVS) device includes a first layer of wide band gap semiconductor material formed of a first conductivity type material, a second layer of wide band gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer, and a third layer of wide band gap semiconductor material formed of the first conductivity type material over at least a portion of the second layer. The TVS device also includes a conductive path electrically coupled between the second layer and an electrical connection to a circuit external to the TVS device, the conductive path configured to permit controlling a turning on of the TVS device at less than a breakdown voltage of the TVS device.

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