The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Mar. 01, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/04 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/24 (2013.01); H01L 29/4916 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor structure includes a substrate and a first element disposed in the substrate and arranged along a first direction. The first element is made of a semiconductor oxide material. The semiconductor structure also includes a dielectric layer disposed on the first element, and a second element, disposed on the dielectric layer and arranged along the first direction. The second element is used as a gate of a transistor structure.