The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Jun. 01, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/308 (2013.01); H01L 21/31111 (2013.01); H01L 21/32139 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device includes semiconductor fins formed on a substrate, gate structures formed transversely over the fins, unipolar spacers formed over the gate structures only, and source and drain regions formed between the gate structures on the fins. The fins are free from the unipolar spacers, and the unipolar spacers have a substantially uniform thickness vertically along the gate structures and include a spacer material with an etch selectivity greater than SiN for oxide removal.