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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103229 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

Oct. 12, 2016

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Yasuyuki Hoshi, Nagano, JP;

Yuichi Harada, Nagano, JP;

Takashi Shiigi, Nagano, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Chen Yoshimura LLP

Primary Examiner:

William F Kraig

Assistant Examiner:

Khatib Rahman

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 23/00 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02529 (2013.01); H01L 21/76895 (2013.01); H01L 21/823807 (2013.01); H01L 23/535 (2013.01); H01L 24/26 (2013.01); H01L 27/092 (2013.01); H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/66712 (2013.01); H01L 29/7805 (2013.01); H01L 29/8611 (2013.01);
Abstract

A semiconductor device includes a wide-bandgap semiconductor substrate of a first conductivity type, a wide-bandgap semiconductor deposition layer of the first conductivity type, semiconductor regions of a second conductivity type, a wide-bandgap semiconductor layer of the second conductivity type, first regions of the first conductivity type, and second regions of the first conductivity type. The width w of a plating film formed on a source electrode of the semiconductor device is greater than or equal to 10 μm. Beneath the plating film, the wide-bandgap semiconductor layer is formed on the surface of one of the semiconductor regions of the second conductivity type.

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