The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Jul. 13, 2017
Ememory Technology Inc., Hsin-Chu, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A nonvolatile memory cell includes a semiconductor substrate, a first OD region, a second OD region for forming an erase gate region, and a trench isolation region separating the first OD region from the second OD region. A select transistor is disposed on the first OD region. A floating gate transistor is serially connected to the select transistor and is disposed on the first OD region. The floating gate transistor includes a floating gate overlying the first OD region. A floating gate extension continuously extends from the floating gate to the second OD region. A shallow junction diffusion region is situated directly under the floating gate extension within the second OD region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile