The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Mar. 27, 2015
Globalfoundries Inc., Grand Cayman, KY;
Dongsuk Park, Mechanicville, NY (US);
Wangkeun Cho, Mechanicville, NY (US);
Wen Hua Cheng, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods and processes for forming semiconductor devices with reduced yield loss and failed dies are provided. One method includes, for instance: obtaining a wafer after at least one fabrication processing; taking first r, θ, z measurements of the wafer after the at least one fabrication processing; performing at least one second fabrication processing; taking second r, θ, z measurements of the wafer after the at least one second fabrication processing; and analyzing the second r, θ, z measurements with respect to the first r, θ, z measurements. A process includes, for instance: obtaining a wafer with a substrate and at least one first device positioned on the substrate; taking first measurements in a r, θ, z coordinate system; forming at least one second device over the substrate; taking second measurements in the r, θ, z coordinate system; and analyzing the second measurements with respect to the first measurements.