The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Nov. 10, 2015
Applicant:

The Board of Trustees of the University of Illinois, Urbana, IL (US);

Inventors:

John Abelson, Urbana, IL (US);

Shaista Babar, Hillsboro, OR (US);

Elham Mohimi, Urbana, IL (US);

Gregory Girolami, Urbana, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); C23C 16/04 (2006.01); C23C 16/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C23C 16/04 (2013.01); C23C 16/18 (2013.01); H01L 21/28562 (2013.01); H01L 21/76876 (2013.01); H01L 21/76885 (2013.01);
Abstract

Provided herein are methods for selectively forming layers of metal films on one portion of a substrate while leaving adjacent portions of the substrate uncoated. The methods provide for selectively depositing metal films on a conductive surface, such as ruthenium oxide, disposed on or near an insulating portion of the substrate, such as a silicon dioxide (SiO) surface. The invention provides methods to simultaneously contact the substrate surface with both the precursor gas and the inhibitor agent leading to the selective formation of metal nuclei on the conductive portion of the substrate. In the methods described, nuclei are selectively formed by a disproportionation reaction occurring on the conductive portion of the substrate but not on the insulating portion of the substrate.


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