The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2018

Filed:

Dec. 14, 2016
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hiroki Kishi, Miyagi, JP;

Jisoo Suh, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32798 (2013.01); H01J 37/32091 (2013.01); H01J 37/32137 (2013.01); H01J 37/32165 (2013.01); H01J 37/32568 (2013.01); H01J 37/32697 (2013.01); H01J 37/32715 (2013.01); H01J 37/32926 (2013.01); H01L 21/3065 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3343 (2013.01); H01L 22/12 (2013.01);
Abstract

A plasma processing apparatusincludes a chamber, a mounting table, a focus ring, a first electrode plateand a second electrode plate. The focus ringis provided around the mounting tableto surround a mounting surface of the mounting table. The first electrode plateis provided above the mounting table. The second electrode plateis provided around the first electrode plateto surround the first electrode plateand is insulated from the first electrode plate. The plasma processing apparatus, in a first process, performs a preset processing on a semiconductor wafer W mounted on the mounting surface with plasma generated within the chamber, and, in a second process, increases an absolute value of a negative DC voltage applied to the second electrode platedepending on an elapsed time of the first process.


Find Patent Forward Citations

Kishi, Hiroki. (2018). Plasma processing method and plasma processing apparatus (U.S. Patent No. 10103011). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10103011

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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