The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Feb. 03, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Chun Hua, Toufen Township, TW;
Chung-Long Chang, Dou-Liu, TW;
Chun-Hung Chen, Xinpu Township, TW;
Chih-Ping Chao, Hsinchu, TW;
Jye-Yen Cheng, Taichung, TW;
Hua-Chou Tseng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a capacitor structure includes forming a first set of electrodes having a first electrode and a second electrode, wherein each electrode of the first set of electrodes has an L-shaped portion. The method further includes forming a second set of electrodes having a third electrode and a fourth electrode, wherein each electrode of the second set of electrodes has an L-shaped portion. The method further includes forming insulation layers between the first set of electrodes and the second set of electrodes. The method further includes forming a first L-shaped line plug connecting the first electrode to the third electrode, wherein an entirety of an outer surface of the first L-shaped line plug is recessed with respect to an outer surface of the L-shaped portion of the first electrode. The method further includes forming a second line plug connecting the second electrode to the fourth electrode.