The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Apr. 08, 2015
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 29/06 (2006.01); C30B 15/20 (2006.01); C23C 16/02 (2006.01); C23C 16/24 (2006.01); C30B 15/22 (2006.01); C30B 25/20 (2006.01); C30B 33/02 (2006.01); C30B 25/02 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); C23C 16/0209 (2013.01); C23C 16/24 (2013.01); C30B 15/203 (2013.01); C30B 15/206 (2013.01); C30B 15/22 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); C30B 33/02 (2013.01); C30B 25/02 (2013.01);
Abstract
A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 mΩ·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees C. or more.