The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Sep. 20, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Takashi Ando, Tuckahoe, NY (US);
Marwan H. Khater, Astoria, NY (US);
Seyoung Kim, Mount Kisco, NY (US);
Hiroyuki Miyazoe, White Plains, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G06N 3/04 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1691 (2013.01); G06N 3/04 (2013.01); H01L 27/2463 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01);
Abstract
Embodiments of the present invention provide systems and methods for the fabrication of a crossbar array fabrication of resistive random access memory (RRAM) cells. The array structure contains large grain copper and its alloy or silver and its alloy. A metal cap and spacer are used to protect copper or silver from chemical modifications during memory cell patterning.