The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jun. 09, 2016
Infineon Technologies Ag, Neubiberg, DE;
Moriz Jelinek, Villach, AT;
Naveen Goud Ganagona, Villach, AT;
Johannes Georg Laven, Taufkirchen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for forming a semiconductor device includes implanting a predefined dose of protons into a semiconductor substrate. Further, the method comprises controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. Further, the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C. and the target temperature is higher than 80° C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile