The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jun. 26, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Ki Hong Lee, Suwon-si, KR;
Seung Ho Pyi, Yongin-si, KR;
Il Young Kwon, Seoul, KR;
Jin Ho Bin, Seoul, KR;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 21/223 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 27/11556 (2017.01); H01L 29/08 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/2236 (2013.01); H01L 21/26513 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 29/04 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/16 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01); H01L 21/324 (2013.01);
Abstract
A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated from the p+ region.