The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Dec. 15, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.