The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Sep. 30, 2016
Applicant:
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Inventors:
Antonio Luis Pacheco Rotondaro, Austin, TX (US);
Wallace P. Printz, Austin, TX (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/6708 (2013.01); H01L 21/67253 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 22/26 (2013.01);
Abstract
A method for controlling the temperature profile of phosphoric acid process over a wafer surface through the dynamic control of radial dispensing of sulfuric acid at a selected temperature, which includes providing a substrate with a layer formed thereupon; dispensing a first chemical and second chemicals onto the layer while adjusting at least one parameter of the second chemical dispense to vary the etch rate across a region of the substrate.