The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Nov. 17, 2017
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventor:
Fayaz Shaikh, Lake Oswego, OR (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/0214 (2013.01); H01L 21/02115 (2013.01); H01L 21/02205 (2013.01); H01L 21/02247 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01);
Abstract
A method for depositing a hardmask layer on a substrate includes nitridating a first layer of the substrate. The first layer is selected from a group consisting of silicon dioxide and silicon nitride. An amorphous carbon layer is deposited on the nitridated first layer via plasma-enhanced chemical vapor deposition (PECVD). A monolayer is deposited on the amorphous carbon layer using gas mixture including a metal precursor gas with a reducing agent and without plasma. A bulk metal-doped carbon hardmask layer is deposited on the monolayer.