The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Dec. 19, 2016
Applicant:
Spts Technologies Limited, Newport, GB;
Inventors:
Assignee:
SPTS TECHNOLOGIES LIMITED, Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02304 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02274 (2013.01); H01L 21/02381 (2013.01); H01L 29/0649 (2013.01);
Abstract
A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of Oor with Ointroduced into the process at a flow rate of 250 sccm or less.