The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Mar. 28, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Keisuke Yoshida, Koshi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B05C 9/14 (2006.01); B05C 11/10 (2006.01); B05D 3/02 (2006.01); B05D 3/06 (2006.01); H01L 21/32 (2006.01); C23C 18/12 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02175 (2013.01); B05C 9/14 (2013.01); B05C 11/1002 (2013.01); B05D 3/0254 (2013.01); B05D 3/06 (2013.01); C23C 18/1216 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02282 (2013.01); H01L 21/02345 (2013.01); H01L 21/02348 (2013.01); H01L 21/32 (2013.01); H01L 21/6715 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 21/68742 (2013.01);
Abstract
A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer, heating the liquid film at a first temperature lower than a crosslinking temperature of the compound, and irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature.