The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Oct. 10, 2016
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Myungjun Lee, San Jose, CA (US);

Mark D. Smith, San Jose, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03F 7/20 (2006.01); G03F 1/76 (2012.01); G03F 1/44 (2012.01);
U.S. Cl.
CPC ...
G03F 7/70633 (2013.01); G03F 1/44 (2013.01); G03F 1/76 (2013.01); G03F 7/70058 (2013.01);
Abstract

A lithography system includes an illumination source, a pattern mask, and an optical element configured to expose a sample with an image of the pattern mask for the fabrication of one or more printed device structures and one or more metrology target structures. The pattern mask includes a device pattern mask area and a metrology target pattern mask area. The device pattern mask area includes a set of device pattern elements distributed with a device pitch. The metrology target pattern mask area includes a set of metrology target pattern elements. The one or more printed metrology target structures include a set of metrology target elements distributed with a metrology target pitch. Regions of the metrology target pattern mask area include sub-resolution features having widths smaller than the resolution of the optical element such that the sub-resolution pattern elements are not included on the one or more printed metrology target structures.


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