The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Aug. 25, 2015
Applicant:

Shin-etsu Handotai Co., Ltd., Tokyo, JP;

Inventors:

Shou Takashima, Sabae, JP;

Yuuichi Miyahara, Echizen, JP;

Atsushi Iwasaki, Echizen, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/22 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/22 (2013.01); C30B 29/06 (2013.01);
Abstract

A method for producing a single crystal, wherein the space is adjusted to a predetermined distance by measuring a distance from a reference height position at a predetermined height above a melt surface to a lower end part of an in-furnace structure in a state wherein the in-furnace structure above the melt surface is installed in a pull chamber, obtaining a lower end part position error which is a difference between measured distance and a distance from the previously set reference height position to the lower end part of the in-furnace structure, obtaining a target distance from the melt surface to the reference height position by adding the lower end part position error and a distance from the reference height position to a melt surface position, and adjusting a distance from an initial position of the melt surface to the reference height position such that the target distance is attained.


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