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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10094033 B1

PDFFull Text
Date of Patent:
Oct. 09, 2018

Filed:

Aug. 16, 2016

Electrodeposited nano-twins copper layer and method of fabricating the same

Applicant:

National Chiao Tung University, Hsinchu, TW;

Inventors:

Chih Chen, Hsinchu, TW;

King-Ning Tu, Hsinchu, TW;

Taochi Liu, Hsinchu County, TW;

Assignee:

National Chiao Tung University, Hsinchu, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Brian W Cohen

Int. Cl.
CPC ...
C25D 3/38 (2006.01); C25D 5/08 (2006.01); C25D 5/18 (2006.01); C25D 7/12 (2006.01); C25D 21/10 (2006.01); C30B 7/12 (2006.01); C30B 29/60 (2006.01); C30B 29/02 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C25D 3/38 (2013.01); C25D 5/08 (2013.01); C25D 5/18 (2013.01); C25D 21/10 (2013.01); C30B 7/12 (2013.01); C30B 29/02 (2013.01); C30B 29/605 (2013.01); H01L 21/2885 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); Y10T 428/12674 (2015.01); Y10T 428/12903 (2015.01);
Abstract

An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.

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Chen, Chih. (2018). Electrodeposited nano-twins copper layer and method of fabricating the same (U.S. Patent No. 10094033). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10094033

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