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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10090417 B1

PDFFull Text
Date of Patent:
Oct. 02, 2018

Filed:

Mar. 18, 2013

Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Takashi Tsuji, Tsukuba, JP;

Akimasa Kinoshita, Tsukuba, JP;

Noriyuki Iwamuro, Tsukuba, JP;

Kenji Fukuda, Tsukuba, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Aaron Gray

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/44 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 21/322 (2006.01); H01L 21/425 (2006.01); H01L 21/28 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/02529 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/08 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01);
Abstract

A p-type region, a ptype region, and a ptype region are selectively disposed in a surface layer of a silicon carbide substrate base. The p-type region and the ptype region are disposed in a breakdown voltage structure portion that surrounds an active region. The ptype region is disposed in the active region to make up a JBS structure. The ptype region surrounds the p-type region to make up a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode overhangs an interlayer insulation film covering a portion of the p-type region and this overhanging portion acts as a field plate. The ptype region has an acceptor concentration greater than or equal to a predetermined concentration and can make a forward surge current larger.

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