The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Feb. 06, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jaewan Chang, Seoul, KR;
Younsoo Kim, Yongin-si, KR;
Sunmin Moon, Yongin-si, KR;
Jaehyoung Choi, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 28/60 (2013.01); H01L 28/90 (2013.01);
Abstract
A semiconductor device comprises a capacitor that includes a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer comprises a first high-k dielectric layer between the first electrode and the second electrode, a first silicon oxide layer between the first high-k dielectric layer and the second electrode, and a first aluminum oxide layer between the first high-k dielectric layer and the second electrode.