The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Mar. 02, 2017
Applicant:

Taiwan Semiconductor Co., Ltd., New Taipei, TW;

Inventors:

Chien-Chung Chen, New Taipei, TW;

Sen Mao, New Taipei, TW;

Hsin-Liang Lin, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 23/4952 (2013.01); H01L 23/49503 (2013.01); H01L 23/49562 (2013.01); H01L 23/49586 (2013.01); H01L 29/0634 (2013.01); H01L 29/41725 (2013.01);
Abstract

An integrated packaging structure is provided. In the package structure, an integrated component body has a first source region, a second source region, a first setting region, and a second setting region, which are separated from each other. A first MOSFET die and a second MOSFET die are located on the first setting region and the second setting region respectively, and have a top surface, a source electrode pad and a gate electrode pad. The source electrode pad and the gate electrode pad are exposed from the top surface and spaced apart from each other. A first source connection element is connected to the source electrode pad of the first MOSFET die and the first source region. A second source connection element is connected to the source electrode pad of the second MOSFET die and the second source region. A gate connection element is connected to the gate electrode pad and a gate region of the integrated component body.


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