The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Nov. 18, 2015
Applicant:

J-devices Corporation, Oita, JP;

Inventor:

Kiyoaki Hashimoto, Ishikawa, JP;

Assignee:

J-DEVICES CORPORATION, Usuki, Oita, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0652 (2013.01); H01L 23/49894 (2013.01); H01L 23/5383 (2013.01); H01L 23/5389 (2013.01); H01L 23/562 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 24/97 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/24145 (2013.01); H01L 2224/24226 (2013.01); H01L 2224/293 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73217 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/92244 (2013.01); H01L 2224/97 (2013.01); H01L 2924/14 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor package includes a first semiconductor device provided on a support substrate; a first encapsulation material covering the first semiconductor device; a first line provided on the first encapsulation material, the first line being connected with the first semiconductor device; an intermediate buffer layer covering the first line, and a second encapsulation material provided on the intermediate buffer layer. The first encapsulation material and the second encapsulation material are each formed of an insulating material different from an insulating material used to form the intermediate buffer layer. A second semiconductor device covered with the second encapsulation material may be provided on the intermediate buffer layer.


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