The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Mar. 08, 2017
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Fumihiko Momose, Nagano, JP;

Hiroyuki Nogawa, Nagano, JP;

Yoshitaka Nishimura, Nagano, JP;

Eiji Mochizuki, Nagano, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/85205 (2013.01);
Abstract

A semiconductor device includes a heat-dissipating base, a first conductive layer bonded to the top surface of the heat-dissipating base, an AlN insulating substrate bonded to the top surface of the first conductive layer, and an electrode terminal having one edge bending to form a bonding edge whose bottom surface faces the top surface of the second conductive layer and is solid-state bonded to a portion of the top surface of the second conductive layer. The crystal grain diameter at the bonded interface of the second conductive layer and electrode terminal is less than or equal to 1 μm, and indentations from the ultrasonic horn are left in the top surface of the bonding edge.


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