The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Nov. 23, 2015
Applicant:
Ovonyx Memory Technology, Llc, Alexandria, VA (US);
Inventors:
Jun Liu, Boise, ID (US);
Kristy A. Campbell, Boise, ID (US);
Assignee:
OVONYX MEMORY TECHNOLOGY, LLC, Alexandria, VA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); H01L 45/04 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1266 (2013.01); H01L 45/1273 (2013.01); H01L 45/143 (2013.01); H01L 45/16 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); Y10S 977/773 (2013.01);
Abstract
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.