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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10084083 B1

PDFFull Text
Date of Patent:
Sep. 25, 2018

Filed:

Oct. 17, 2017

Semiconductor structure and manufacturing method of the same

Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Shin-Hung Li, Caotun Township, Nantou County, TW;

Kuan-Chuan Chen, Taichung, TW;

Nien-Chung Li, Hsinchu, TW;

Wen-Fang Lee, Hsinchu, TW;

Chih-Chung Wang, Hsinchu, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsinchu, TW;

Attorney:

WPAT, PC

Primary Examiner:

Shahed Ahmed

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01); G03F 1/36 (2012.01); H01L 21/308 (2006.01); H01L 21/265 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); G03F 1/36 (2013.01); H01L 21/26513 (2013.01); H01L 21/3086 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/36 (2013.01); H01L 29/42372 (2013.01); H01L 29/66575 (2013.01);
Abstract

A semiconductor structure and a manufacturing method of a semiconductor structure are provided. The semiconductor structure includes a semiconductor substrate, a gate, a first diffusion region and a second diffusion region. The gate is disposed on the semiconductor substrate and extends along a first direction. The first diffusion region is formed in the semiconductor substrate, and the second diffusion region is formed in the first diffusion region. The first diffusion region has a first portion located underneath the gate and a second portion protruded from a lateral side of the gate, the first portion has a first length parallel to the first direction, the second portion has a second length parallel to the first direction, and the first length is larger than the second length.

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