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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10083995 B1

PDFFull Text
Date of Patent:
Sep. 25, 2018

Filed:

May. 18, 2017

Semiconductor display device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Satoshi Murakami, Tochigi, JP;

Masahiko Hayakawa, Kanagawa, JP;

Kiyoshi Kato, Kanagawa, JP;

Mitsuaki Osame, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Nixon Peabody LLP

Jeffrey L. Costellia

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 33/52 (2010.01); G02F 1/1362 (2006.01); H01L 27/32 (2006.01); H01L 27/13 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1248 (2013.01); G02F 1/136227 (2013.01); H01L 27/12 (2013.01); H01L 27/124 (2013.01); H01L 27/1214 (2013.01); H01L 27/1244 (2013.01); H01L 27/1255 (2013.01); H01L 27/3246 (2013.01); H01L 33/52 (2013.01); H01L 27/13 (2013.01); H01L 27/3276 (2013.01); H01L 51/5237 (2013.01); H01L 51/5253 (2013.01);
Abstract

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

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