The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Oct. 24, 2017
International Business Machines Corporation, Armonk, NY (US);
Cheng-Wei Cheng, White Plains, NY (US);
Sanghoon Lee, Yorktown Heights, NY (US);
Effendi Leobandung, Stormville, NY (US);
Renee T. Mo, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method includes forming first structures on a first portion of a silicon substrate and second structures on a second portion of the substrate; forming spacers on the first structures; forming dummy gates on the first and second structures; depositing a first interlayer dielectric on the dummy gates; removing the dummy gates from the second structures; forming metal gates on the second structures; performing an anneal; forming recess areas in the first interlayer dielectric; removing the spacers from the first structures; epitaxially growing sidewalls on the first structures; removing portions of the first structures outside the dummy gates from the first portion; depositing a second interlayer dielectric on the first portion; removing the dummy gates from the first portion; removing portions of the first structures previously under the dummy gates from the first portion; and forming metal gates on the first structures.