The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Jun. 23, 2017
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventor:

Yih-Lang Lin, Taipei, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); H01L 27/11524 (2017.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); G11C 7/14 (2006.01); G11C 16/28 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); G11C 7/14 (2013.01); G11C 16/10 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01); G11C 16/3459 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); H01L 23/3171 (2013.01); H01L 23/528 (2013.01); H01L 29/0649 (2013.01); H01L 29/4916 (2013.01); H01L 29/4975 (2013.01);
Abstract

A control voltage searching method is provided. Firstly, a control pulse with a preset control voltage and a preset pulse width is generated, and a control action on a memory cell. If the pulse count of the control pulse is smaller than a first number, the control voltage plus a first increment is set as an updated value of the control voltage. If the pulse count of the control pulse is not smaller than a first number, a first-stage verifying action is performed to judge whether the memory cell passes a first-stage verification test. If the memory cell passes the first-stage verification test, a second-stage verifying action is performed to judge whether the memory cell passes a second-stage verification test. If the memory cell passes the second-stage verification test, a target value of the control voltage is acquired.


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