The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Jun. 05, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Brian J. Greene, Wappingers Falls, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823828 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/12 (2013.01); H01L 29/42384 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/785 (2013.01);
Abstract
A self-aligned active region block mask is used to pattern and define a plurality of semiconductor fins as well as attendant shallow trench isolation (STI) structures. The block mask, a portion of which comprises a patterned fin hard mask, permits decoupling of inner and outer fin etch processes, as well as independent optimization of inner fin and outer fin dielectric properties. The fin-forming method also forestalls the creation of isolated, free-standing fins, which decreases the likelihood of mechanical damage to the fins during processing.