The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Apr. 30, 2015
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventor:
Qing Zhang, Montreal, CA;
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01P 15/125 (2006.01); G01L 19/00 (2006.01); B81C 1/00 (2006.01); G01P 15/08 (2006.01);
U.S. Cl.
CPC ...
G01L 19/0092 (2013.01); B81C 1/00015 (2013.01); G01P 15/0802 (2013.01); G01P 15/125 (2013.01);
Abstract
A method for forming a multi-sensor system includes forming an inertial sensor fixed electrode of an inertial sensor and a movable electrode of a pressure sensor on a first substrate having through silicon vias (TSVs). A second substrate is fusion bonded to a bonding layer on the first substrate. The second substrate and the bonding layer are patterned to form a transducer layer of the inertial sensor and a pressure sensor fixed electrode of the pressure sensor. The first substrate is etched to form a pressure sensor port aligned with the movable electrode.