The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Mar. 18, 2013
Hangzhou Silan Integrated Circuit Co., Ltd, Hangzhou (Xiasha), CN;
HANGZHOU SILAN INTEGRATED CIRCUIT CO., LTD, Hangzhou (Xiasha), CN;
Abstract
A multiple silicon trenches forming method and an etching mask structure, the method comprises: step S, providing a MEMS sealing cap silicon substrate (); step S, forming n stacked mask layers () on the MEMS sealing cap silicon substrate (), after forming each mask layer, photolithographing and etching the mask layer and all other mask layers beneath the same to form a plurality of etching windows (D, D, D); step S, etching the MEMS sealing cap silicon substrate by using the current uppermost mask layer and a layer of mask material beneath the same as a mask; step S, removing the current uppermost mask layer; step S, repeating the step Sand the step Suntil all the n mask layers are removed. The present invention can form a plurality of deep trenches with high aspect ratio on the MEMS sealing cap silicon substrate using conventional semiconductor processes, avoiding the problem that the conventional spin coating cannot be conducted on a sealing cap wafer with deep trenches using photoresist.