The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Feb. 24, 2017
Applicant:
Advanced Silicon Group, Inc., Lincoln, MA (US);
Inventors:
Marcie R. Black, Lincoln, MA (US);
Jeffrey B. Miller, Brookline, MA (US);
Michael Jura, Santa Monica, CA (US);
Claire Kearns-McCoy, Boston, MA (US);
Joanne Yim, San Francisco, CA (US);
Brian P. Murphy, Revere, MA (US);
Assignee:
Advanced Silicon Group, Inc., Lincoln, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 31/0352 (2006.01); H01L 21/285 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/288 (2006.01); H01L 21/3213 (2006.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01); H01L 21/308 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035227 (2013.01); H01L 21/02068 (2013.01); H01L 21/288 (2013.01); H01L 21/2855 (2013.01); H01L 21/28568 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01); H01L 29/0676 (2013.01); H01L 29/16 (2013.01); H01L 31/028 (2013.01); H01L 31/022408 (2013.01); H01L 31/1804 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/762 (2013.01); Y10S 977/814 (2013.01); Y10S 977/834 (2013.01); Y10S 977/888 (2013.01); Y10S 977/891 (2013.01); Y10S 977/892 (2013.01); Y10S 977/948 (2013.01);
Abstract
In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.