The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Feb. 24, 2015
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Atsuo Isobe, Isehara, JP;
Toshinari Sasaki, Tochigi, JP;
Shinya Sasagawa, Chigasaki, JP;
Akihiro Ishizuka, Sagamihara, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 27/0688 (2013.01); H01L 27/1225 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02667 (2013.01);
Abstract
A method for manufacturing an oxide semiconductor layer, comprising forming an oxide semiconductor layer over an insulating layer so as to be along with a curved surface of a projecting structural body of the insulating layer, wherein a length of the projecting structural body in a height direction is larger than a width of the projecting structural body, is provided.