The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Jul. 27, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01); H01L 21/765 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/73 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/308 (2013.01); H01L 21/3083 (2013.01); H01L 21/765 (2013.01); H01L 21/76224 (2013.01); H01L 29/404 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/66666 (2013.01); H01L 29/66696 (2013.01); H01L 29/66704 (2013.01); H01L 29/7825 (2013.01); H01L 29/7827 (2013.01); H01L 29/0696 (2013.01); H01L 29/0804 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/66234 (2013.01); H01L 29/73 (2013.01);
Abstract
A method of manufacturing a structure in a semiconductor body comprises forming a first mask above a first surface of the semiconductor body. The first mask comprises an opening surrounding a first portion of the first mask, thereby separating the first portion and a second portion of the first mask. The semiconductor body is processed through the opening at the first surface. The opening is increased by removing at least part of the first mask in the first portion while maintaining the first mask in the second portion. The semiconductor body is further processed through the opening at the first surface.