The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Sep. 30, 2016
E Ink Holdings Inc., Hsinchu, TW;
Hsiao-Wen Zan, Hsinchu, TW;
Chuang-Chuang Tsai, Hsinchu, TW;
Hsin Chiao, Hsinchu, TW;
Wei-Tsung Chen, Hsinchu, TW;
E Ink Holdings Inc., Hsinchu, TW;
Abstract
A manufacturing method of a transistor is provided, and the method includes: providing a base; forming a fin-shaped gate on the base; covering the fin-shaped gate with an insulation layer; providing a substrate; forming a partially cured sol-gel on the substrate; inserting the fin-shaped gate into the partially cured sol-gel, so that a portion of the fin-shaped gate is uncovered by the partially cured sol-gel; after inserting the fin-shaped gate into the partially cured sol-gel, curing the partially cured sol-gel; and processing a portion of the partially cured sol-gel not overlapping with the fin-shaped gate to increase conductivity of the portion of the partially cured sol-gel.