The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Aug. 17, 2017
Omnivision Technologies, Inc., Santa Clara, CA (US);
Qin Wang, San Jose, CA (US);
Bill Phan, San Jose, CA (US);
Sing-Chung Hu, San Jose, CA (US);
Gang Chen, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensor also includes a plurality of transfer gates coupled between the plurality of photodiodes and the floating diffusion to transfer the image charge generated in the plurality of photodiodes into the floating diffusion. Peripheral circuitry is disposed proximate to the plurality of photodiodes and coupled to receive the image charge from the plurality of photodiodes. A shallow trench isolation structure is laterally disposed, at least in part, between the plurality of photodiodes and the peripheral circuitry to prevent electrical crosstalk between the plurality of photodiodes and the peripheral circuitry. The peripheral circuitry includes one or more transistors including a source electrode and a drain electrode that are raised above a surface of the semiconductor material.