The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Jul. 28, 2016
Globalfoundries Inc., Grand Cayman, KY;
Xunyuan Zhang, Albany, NY (US);
Moosung M. Chae, Saratoga Springs, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Embodiments of the present disclosure may provide a method of forming an integrated circuit (IC) structure, the method including: providing a structure with: a conductive region, and an inter-level dielectric (ILD) material positioned on the conductive region, wherein the ILD material includes a contact opening to the conductive region; forming a doped metal layer within the contact opening such that the doped metal layer overlies the conductive region, wherein the doped metal layer includes a first metal doped with a second metal; and forming a contact to the conductive region within the contact opening of the ILD material by annealing the doped metal layer such that the second metal diffuses into the ILD material to form an interface liner directly between the annealed doped metal layer and the ILD material.