The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Mar. 14, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Yat-Kai Sun, Hsinchu, TW;
Chao-Nan Chen, Tainan, TW;
Hung-Lin Shih, Hsinchu, TW;
Che-Hung Huang, Hsinchu, TW;
Wei-Lun Hsu, Taichung, TW;
Cheng-Chia Liu, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.