The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Mar. 17, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Po-Ju Chen, Hsinchu, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Fang-Yi Wu, Kaohsiung, TW;
Chih-Hao Chen, Hsinchu, TW;
Wen-Yen Chen, Chutung Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
Formation methods of a semiconductor device structure are provided. The method includes forming a bottom layer, a middle layer and an upper layer over a substrate, developing the upper layer to form an upper pattern with a first opening exposing the middle layer and a sidewall of the upper pattern. The upper pattern has a top surface. The method further includes conformally forming a protective layer over the upper pattern and the exposed middle layer, anisotropically etching the protective layer to leave a portion of the protective layer over the sidewall of the upper pattern and expose the middle layer, etching the middle layer not covered by the upper pattern and the portion of the protective layer to form a middle pattern with a second opening exposing the bottom layer, and etching the bottom layer though the second opening of the middle pattern.