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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10079173 B1

PDFFull Text
Date of Patent:
Sep. 18, 2018

Filed:

Oct. 04, 2016

Methods of forming metallization lines on integrated circuit products and the resulting products

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Lars Liebmann, Mechanicville, NY (US);

Daniel Chanemougame, Troy, NY (US);

Geng Han, Fishkill, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Abbigale Boyle

Int. Cl.
CPC ...
H01L 29/768 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/76802 (2013.01); H01L 21/76814 (2013.01); H01L 21/76832 (2013.01); H01L 21/76835 (2013.01); H01L 21/76861 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/401 (2013.01);
Abstract

One illustrative method disclosed includes, among other things, forming a layer of insulating material comprising a first insulating material above a substrate and forming a metallization blocking structure in the layer of insulating material at a location that is in a path of a metallization trench to be formed in the layer of insulating material, the metallization blocking structure comprising a second insulating material that is different from the first insulating material. The method also includes forming the metallization trench in the layer of insulating material on opposite sides of the metallization blocking structure and forming a conductive metallization line in the metallization trench on opposite sides of the metallization blocking structure.

Find Patent Forward Citations

Xie, Ruilong. (2018). Methods of forming metallization lines on integrated circuit products and the resulting products (U.S. Patent No. 10079173). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10079173

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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