The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Apr. 24, 2017
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Sung Hyun Jo, Sunnyvale, CA (US);

Hagop Nazarian, San Jose, CA (US);

Lin Shih Liu, Fremont, CA (US);

Assignee:

CROSSBAR, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 14/0045 (2013.01);
Abstract

Providing for improved sensing of non-volatile resistive memory to achieve higher sensing margins, is described herein. The sensing can leverage current-voltage characteristics of a volatile selector device within the resistive memory. A disclosed sensing process can comprise activating the selector device with an activation voltage, and then lowering the activation voltage to a holding voltage at which the selector device deactivates for an off-state memory cell, but remains active for an on-state memory cell. Accordingly, very high on-off ratio characteristics of the selector device can be employed for sensing the resistive memory, providing sensing margins not previously achievable for non-volatile memory.


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Jo, Sung. (2018). Sensing a non-volatile memory device utilizing selector device holding characteristics (U.S. Patent No. 10079060). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10079060

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