The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Oct. 03, 2016
Nikon Corporation, Tokyo, JP;
Eric Peter Goodwin, Oro Valley, AZ (US);
Michael B. Binnard, Belmont, CA (US);
Ruslan Kurdyumov, San Francisco, CA (US);
NIKON CORPORATION, Tokyo, JP;
Abstract
System and method for accurately measuring alignment of every exposure field on a pre-patterned wafer without reducing wafer-exposure throughput. Diffraction grating disposed in scribe-lines of such wafer, used as alignment marks, and array of encoder-heads (each of which is configured to define positional phase(s) of at least one such alignment mark) are used. Determination of trajectory of a wafer-stage scanning during the wafer-exposure in the exposure tool employs determining in-plane coordinates of such spatially-periodic alignment marks by simultaneously measuring position-dependent phases of signals produced by these marks as a result of recombination of light corresponding to different diffraction orders produced by these marks. Measurements may be performed simultaneously at all areas corresponding to at least most of the exposure fields of the wafer, and/or with use of a homodyne light source, and/or in a wavelength-independent fashion, and/or with a pre-registration process allowing for accommodation of wafers with differently-dimensioned exposure fields.