The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Aug. 22, 2016
Kabushiki Kaisha Toshiba, Tokyo, JP;
Akira Yoshioka, Kanazawa Ishikawa, JP;
Kohei Oasa, Nonoichi Ishikawa, JP;
Hung Hung, Nonoichi Ishikawa, JP;
Yasuhiro Isobe, Kanazawa Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer containing aluminum located on the first nitride semiconductor layer, one or more nitride layers containing aluminum located on the second nitride semiconductor layer, a source electrode located on the second nitride semiconductor layer, a drain electrode located on one of the second nitride semiconductor layer or the nitride layer, and a gate electrode located between the source electrode and the drain electrode. An end of the nitride layer on the source electrode side thereof is located between the gate electrode and the drain electrode.