The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Sep. 01, 2017
Applicant:
D3 Semiconductor Llc, Addison, TX (US);
Inventors:
Thomas E. Harrington, III, Carrollton, TX (US);
Zhijun Qu, Frisco, TX (US);
Assignee:
D3 Semiconductor LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/739 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 27/0635 (2013.01); H01L 27/0652 (2013.01); H01L 27/0922 (2013.01); H01L 27/1203 (2013.01); H01L 29/0619 (2013.01); H01L 29/0634 (2013.01); H01L 29/7397 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 29/78 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.