The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Mar. 07, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/3081 (2013.01); H01L 21/32053 (2013.01); H01L 21/76865 (2013.01); H01L 21/76874 (2013.01); H01L 21/76876 (2013.01);
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a target layer over a substrate and forming a seed layer over the target layer. The method includes forming a hard mask layer over the seed layer, and the hard mask layer includes an opening to expose a portion of the seed layer. The method includes forming a conductive layer in the opening, and the conductive layer is selectively formed on the portion of the seed layer. The method includes etching a portion of the target layer by using the conductive layer as a mask.