Three-dimensional junction memory device and method reading thereof using hole current detection

Abstract

Data stored in a plurality of charge storage elements in a three-dimensional memory device can be read with high speed by measuring a majority charge carrier current passing through a vertical semiconductor channel. A memory film is provided in a memory opening extending through an alternating stack of insulating layers and electrically conductive layers. A set of doped semiconductor material regions having a doping of a first conductivity type can collectively extend continuously from underneath a top surface of a substrate through the memory film to a level of a topmost layer of the alternating stack. A well contact via structure can contact a doped contact region, which is an element of the set of doped semiconductor material regions. A p-n junction is provided within each memory opening between the doped vertical semiconductor channel and an upper doped semiconductor region having a doping of a second conductivity type.